Silicide gate field effect transistors and methods for...

Details Silicide gate field effect transistors and methods for... Silicide gate field effect transistors and methods for...

2006-04-27

2010-02-23

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S661000, C438S664000, C257SE21475, C257SE21596, C257SE21592

Reexamination Certificate

active

07666790

ABSTRACT:
A method for fabricating a silicide gate field effect transistor includes masking a silicon source/drain region prior to forming the silicide gate by annealing a metal silicide forming metal layer contacting a silicon-containing gate. The silicide gate may be either a fully silicided gate or a partially silicided gate. After unmasking the source/drain region a silicide layer may be formed upon the source/drain region, and also upon the partially silicided gate. The second silicide layer and the partially silicided gate also provide a fully silicided gate.

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