Non-volatile memory cell with fully isolated substrate as...

Details Non-volatile memory cell with fully isolated substrate as... Non-volatile memory cell with fully isolated substrate as...

2007-01-12

2010-10-05

Purvis, Sue A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21662

Reexamination Certificate

active

07808034

ABSTRACT:
In a non-volatile memory cell, charge is stored in a fully isolated substrate or floating bulk that forms a storage capacitor with a first poly strip and includes a second poly strip defining a control gate and a third poly strip coupled to a read transistor gate.

REFERENCES:
patent: 5905675 (1999-05-01), Madurawe et al.
patent: 6031771 (2000-02-01), Yiu et al.
patent: 6191980 (2001-02-01), Kelley et al.
patent: 2002/0149084 (2002-10-01), Tamaki et al.
patent: 2005/0219912 (2005-10-01), Gendrier et al.

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