Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2009-03-25
2010-11-02
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21493, C427S255395
Reexamination Certificate
active
07825039
ABSTRACT:
A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.
REFERENCES:
patent: 6350708 (2002-02-01), Hurley
patent: 6881684 (2005-04-01), Aota et al.
patent: 7129187 (2006-10-01), Joe
patent: 2003/0049372 (2003-03-01), Cook et al.
patent: 2005/0130448 (2005-06-01), Olsen et al.
patent: 2005/0287775 (2005-12-01), Hasebe et al.
patent: 6-45256 (1994-02-01), None
patent: 11-87341 (1999-03-01), None
patent: WO 2004/066377 (2004-08-01), None
Fukushima Kohei
Orito Koichi
Sato Jun
Takahashi Toshiki
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Smoot Stephen W
Tokyo Electron Limited
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