Vertical plasma processing method for forming silicon...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C257SE21493, C427S255395

Reexamination Certificate

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07825039

ABSTRACT:
A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.

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patent: 2003/0049372 (2003-03-01), Cook et al.
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patent: 2005/0287775 (2005-12-01), Hasebe et al.
patent: 6-45256 (1994-02-01), None
patent: 11-87341 (1999-03-01), None
patent: WO 2004/066377 (2004-08-01), None

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