Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-10-12

2010-06-29

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S306000, C257S308000, C438S244000, C438S253000

Reexamination Certificate

active

07745866

ABSTRACT:
A semiconductor device includes a capacitor which has: a lower electrode formed along an opening provided above a semiconductor substrate to have a concave cross section; a capacitor insulating film formed on the inner and top surfaces of the lower electrode; and an upper electrode formed on the capacitor insulating film. The upper electrode includes: a first conductive film formed on the inner surface of the capacitor insulating film and filling the opening; and a second conductive film formed to extend from the top surface of the first conductive film to the top surface of the capacitor insulating film.

REFERENCES:
patent: 6072210 (2000-06-01), Choi
patent: 6794694 (2004-09-01), Diodato et al.
patent: 7476922 (2009-01-01), Won et al.
patent: 2002/0084480 (2002-07-01), Basceri et al.
patent: 2004-349462 (2004-12-01), None

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