Insulator film, manufacturing method of multilayer wiring...

Details Insulator film, manufacturing method of multilayer wiring... Insulator film, manufacturing method of multilayer wiring...

2007-08-21

2010-02-02

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S780000

Reexamination Certificate

active

07655576

ABSTRACT:
In a method for manufacturing a semiconductor device, including forming an insulator film including a material having Si—CH3bond and Si—OH bond, and irradiating the insulator film with ultraviolet rays, the rate of decrease of C concentration by X-ray photoelectron spectroscopy is not more than 30%, and the rate of decrease of one or more bonds selected from the group consisting of C—H bond, O—H bond and Si—O bond of Si—OH is not less than 10%, as a result of ultraviolet ray irradiation. A low-dielectric-constant insulator film that has a high film strength and can prevent increase of dielectric constant due to moisture absorption, a semiconductor device that can prevent device response speed delay and reliability decrease due to parasite capacity increase, and a manufacturing method therefor are provided.

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German Office Action dated Feb. 5, 2009, issued in corresponding German patent application No. 10 2007 037 445.5-43.

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