Method of manufacturing semiconductor device and...

Details Method of manufacturing semiconductor device and... Method of manufacturing semiconductor device and...

2007-08-24

2010-10-26

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

C257S698000, C257S774000, C257SE23067, C257SE21597, C438S667000

Reexamination Certificate

active

07821105

ABSTRACT:
A silicon substrate has a protective film formed on each side. A semiconductor surface opening not smaller than a given region is formed by removing the protective film. A through-hole having an inner size smaller than the given region is formed in the opening by laser machining. Thereafter, the inner size of the through-hole is increased by anisotropic etching, and the etching is ended when the inner size of the through-hole reaches the given size. In this way, a through-hole of a given size can be formed without allowing reversely tapered crystal planes to appear from a surface of the substrate toward the inside of the through-hole.

REFERENCES:
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patent: 7279776 (2007-10-01), Morimoto
patent: 2002/0151171 (2002-10-01), Furusawa
patent: 2005/0266687 (2005-12-01), Morimoto
patent: 2006/0040494 (2006-02-01), Hiatt
patent: 2002-210614 (2002-07-01), None

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