Substrate processing methods

Details Substrate processing methods Substrate processing methods

2006-06-15

2010-11-30

Chen, Bret (Department: 1715)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S249700, C427S374600, C427S376100

Reexamination Certificate

active

07842356

ABSTRACT:
Substrate processing methods involve forming an insulating film of amorphous carbon on a substrate by supplying acetylene gas and hydrogen gas with a volume ratio of 4:3 to 4:1, or alternatively, butyne gas, into a process vessel in which the substrate is accommodated. The methods further involve generating a plasma inside of the process vessel by emitting a microwave. The pressure inside of the process vessel is maintained to be 4.0 Pa or less and the substrate is maintained to be 200° C. or less while the insulating film is formed.

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