Memory array of non-volatile electrically alterable memory...

Details Memory array of non-volatile electrically alterable memory... Memory array of non-volatile electrically alterable memory...

2006-02-06

2010-11-16

Mai, Anh D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S208000, C257SE27103, C257SE29304, C257SE29308, C365S185060, C365S185120

Reexamination Certificate

active

07834388

ABSTRACT:
A memory cell that includes a control gate disposed laterally between two floating gates where each floating gate is capable of holding data. Each floating gate in a memory cell may be erased and programmed by applying a combination of voltages to diffusion regions, the control gate, and a well. A plurality of memory cells creates a memory string, and a memory array is formed from a plurality of memory strings arranged in rows and columns.

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