Liquid encapsulated zone melting crystal growth method and appar

Details Liquid encapsulated zone melting crystal growth method and appar Liquid encapsulated zone melting crystal growth method and appar

1988-11-01

1991-04-16

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566161, 1566162, 1566163, 1566164, 156DIG81, 156DIG72, B32B 0000

Patent

active

050079808

ABSTRACT:
A method and apparatus for growing an extended length single crystal of a Group III-V or II-VI material such as GaAs by moving a crucible containing a seed crystal and precompounded crystal material encapsulated in a molten encapsulant preferably vertically in a multi-zone furnace between two furnace zones maintained at temperatures above the melting point of the encapsulant but below the melting point of the crystal material through an intervening short "spike" zone maintained at a temperature at least equal to the melting temperature of the crystal material to crystallize the precompounded crystal material with the seed crystal, and tipping the crucible in the furnace, e.g. by tipping the furnace with the crucible in it, to decant the encapsulant prior to recovering the crystal.

REFERENCES:
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patent: 4521272 (1985-06-01), Gault
patent: 4578145 (1986-03-01), Bartlett et al.
patent: 4740264 (1985-04-01), Naumann et al.
patent: 4824520 (1989-04-01), Morrison
Swiggard, "Liquid Encapsulation Zone Refining (LEZOR)", Journal of the Electrochemical Society, vol. 114, No. 9, pp. 976-977 (1967).
Johnson, "Liquid Encapsulated Floating Zone Melting of GaAs", Journal of Crystal Growth, vol. 30, pp. 249-256 (1975).
Swiggard et al., "Preparation of Bulk Alloys of III-V Compounds", Inst. Phys. Conf. Ser., No. 65, Ch. 1 (1983).

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