Semiconductor device and semiconductor system

Details Semiconductor device and semiconductor system Semiconductor device and semiconductor system

2009-09-02

2010-10-26

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S317000, C257SE29112, C257SE29129, C257SE29135

Reexamination Certificate

active

07821054

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a first and second semiconductor regions formed on the semiconductor substrate insulated and separated from each other, a gate dielectric film formed on the substrate to overlap the first and second semiconductor regions, a floating gate electrode formed on the gate dielectric film and in which a coupling capacitance of the first semiconductor region is larger than that of the second semiconductor region, first source and drain layers formed on the first semiconductor region to interpose the floating gate electrode therebetween, a first and second wiring lines connected to the first source and drain layers, respectively, second source and drain layers formed on the second semiconductor region to interpose the floating gate electrode therebetween, and a third wiring line connected to the second source and drain layers in common.

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