Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-22
2010-10-26
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S154000, C257S296000, C257S335000, C257S341000, C257S351000, C257S358000, C257S516000, C438S017000
Reexamination Certificate
active
07821069
ABSTRACT:
A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.
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The Nikkan Kogyo Shimbun, Ltd.,Application Technique of Power MOSFET, pp. 129-131 (with English translation).
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The Nikkan Kogyo Shimbun, Ltd.,Application Technique of Power MOSFET, Published Oct. 24, 1988, pp. 128-131 (with English Translation).
Ban Hiroyuki
Shiraki Satoshi
Yamada Akira
DENSO CORPORATION
Posz Law Group , PLC
Tran Tan N
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