Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-05
2010-10-19
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000
Reexamination Certificate
active
07816714
ABSTRACT:
Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate, an electrical junction region in the first substrate electrically connected with the readout circuitry, and an interconnection on the first substrate. The interconnection can be formed for connection to the electrical junction region. An image sensing device can be formed on the interconnection.
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patent: 7294873 (2007-11-01), Suzuki et al.
patent: 7675101 (2010-03-01), Hwang
patent: 2006/0154034 (2006-07-01), Araki
patent: 2007/0272981 (2007-11-01), Ha
patent: 2009/0179295 (2009-07-01), Hwang
Dongbu Hitek Co., Ltd.
Jahan Bilkis
Louie Wai-Sing
Saliwanchik Lloyd & Saliwanchik
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