Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S219000, C438S479000, C257SE29285, C257SE21415, C257SE21411

Reexamination Certificate

active

07807520

ABSTRACT:
To provide a method for manufacturing a large semiconductor device which easily operates normally and has excellent current characteristics. A first single-crystal semiconductor layer is provided over an insulating substrate. Then, the first single-crystal semiconductor layer is processed into an island shape. After that, a second single-crystal semiconductor layer is provided over the insulating substrate so as to overlap with part of a region where the first single-crystal semiconductor layer is provided. After that, the second single-crystal semiconductor layer is processed into an island shape. Thus, defects at joint portions in the case of providing the single-crystal semiconductor layers can be reduced.

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patent: 06-018926 (1994-01-01), None

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