Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-06-19
2010-10-05
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S219000, C438S479000, C257SE29285, C257SE21415, C257SE21411
Reexamination Certificate
active
07807520
ABSTRACT:
To provide a method for manufacturing a large semiconductor device which easily operates normally and has excellent current characteristics. A first single-crystal semiconductor layer is provided over an insulating substrate. Then, the first single-crystal semiconductor layer is processed into an island shape. After that, a second single-crystal semiconductor layer is provided over the insulating substrate so as to overlap with part of a region where the first single-crystal semiconductor layer is provided. After that, the second single-crystal semiconductor layer is processed into an island shape. Thus, defects at joint portions in the case of providing the single-crystal semiconductor layers can be reduced.
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Fish & Richardson P.C.
Fourson George
Semiconductor Energy Laboratory Co,. Ltd.
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