Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-02
2010-10-12
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S168000, C257S288000, C257S355000, C257S371000, C257S401000, C257S492000, C257S493000
Reexamination Certificate
active
07812402
ABSTRACT:
In the upper surface of a p−substrate, an n-type impurity region is formed. In the upper surface of the n-type impurity region, a p-well is formed. Also in the upper surface of the n-type impurity region, a p+-type source region and a p+-type drain region are formed. In the upper surface of the p-well, an n+-type drain region and an n+-type source region are formed. In the p−substrate, an n+buried layer having an impurity concentration higher than that of the n-type impurity region is formed. The n+buried layer is formed in contact with the bottom surface of the n-type impurity region at a greater depth than the n-type impurity region.
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Korean Office Action dated Nov. 22, 2006 (with English Translation).
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Japanese Office Action issued in JP 2004-349702 dated Jul. 20, 2010 with English Translation.
Buchanan & Ingersoll & Rooney PC
Mitsubishi Denki & Kabushiki Kaisha
Wojciechowicz Edward
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