Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-10-15
2010-10-12
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S183000, C438S926000
Reexamination Certificate
active
07812406
ABSTRACT:
A method for manufacturing a semiconductor device has forming a first insulating film on a semiconductor substrate, forming an electrode layer on said first insulating film, etching said electrode layer, said first insulating film and said semiconductor substrate of a first predetermined region to form a trench, burying an element-isolating insulating film in said trench, forming a second insulating film on said element-isolating insulating film and above said electrode layer, etching said second insulating film, said electrode layer and said element-isolating insulating film of a second predetermined region to form a gate pattern and a dummy pattern, forming a third insulating film for covering said gate pattern and said dummy pattern, and planarizing said third insulating film using said second insulating film as a stopper.
REFERENCES:
patent: 6555427 (2003-04-01), Shimizu et al.
patent: 6661052 (2003-12-01), Matsui et al.
patent: 2003-243617 (2003-08-01), None
patent: 2004-349622 (2004-12-01), None
Choudhry Mohammad
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Smith Bradley K
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