Methods and apparatus for semiconductor memory devices...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S396000, C257S506000, C257SE29020, C257SE29021

Reexamination Certificate

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07808055

ABSTRACT:
The present invention discloses semiconductor devices that can be manufactured utilizing standard process of manufacturing and that can hold information. In accordance with a presently preferred embodiment of the present invention, one or more semiconductor devices can be formed in a well on a substrate where isolation trenches surround one or more devices to create storage regions (floating wells) that is capable of holding a charge. Depending on the charge in the storage region (floating well), it can represent information. The semiconductor devices of the present invention can be manufactured using the standard process of manufacturing (bulk cmos processing).

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patent: 6144076 (2000-11-01), Puchner et al.
patent: 6169007 (2001-01-01), Pinter
patent: 6538278 (2003-03-01), Chau
patent: 6674127 (2004-01-01), Kotani
patent: 7214989 (2007-05-01), Ushiroda et al.
patent: 7285818 (2007-10-01), Dhaoui et al.

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