Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-09-28
2010-02-16
Hoang, Quoc D (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S520000, C257SE21319, C257SE21324
Reexamination Certificate
active
07662680
ABSTRACT:
A method of producing a semiconductor element in a substrate includes forming a plurality of micro-cavities and carbide precipitates in the substrate, creating an amorphization of the substrate to form crystallographic defects and a doping of the substrate with doping atoms, annealing the substrate such that at least a part of the crystallographic defects are eliminated using the micro-cavities and the carbide precipitates, and wherein the semiconductor element is formed using the doping atoms.
REFERENCES:
patent: 2007/0161219 (2007-07-01), Giles
patent: 2008/0149929 (2008-06-01), Giles
patent: 2009/0057678 (2009-03-01), Goldbach et al.
patent: 10 2005 054 218 (2007-05-01), None
Clark, Mark H., et al., “Effects of amorphizing species' ion mass on the end-of-range damage formation in silicon,” Applied Physics Letters, Jun. 3, 2002, pp. 4163-4165, vol. 80,No. 22, American Institute of Physics.
Cowern, N.E.B., et al., “Physics-Based Diffusion Simulations for Preamorphized Ultrashallow Junctions,” Mat. Res. Soc. Symp. Proc, 2003, 6 pages, vol. 675.
Duffy, R., et al., “Boron diffusion in amorphous silicon and the role of fluorine,” Applied Physics Letters, May 24, 2004, pp. 4283-4285, vol. 84,No. 21, American Institute of Physics.
Duffy, R., et al., “Boron uphill diffusion during ultrashallow junction formation,” Applied Physics Letters, May 26, 2003, pp. 3647-3649, vol. 82,No. 21, American Institute of Physics.
Lerch, W., et al., “Advanced activation of ultra-shallow junctions using flash-assisted RTP,” Materials Science & Engineering B, 2005, pp. 24-31, Elsevier B.V.
Giles, L. F., et al., “On the Role of Nanocavities in Suppressing Boron Transient Enhanced Diffusion and Deactivation in F+ Coimplanted Silicon,” Journal of Applied Physics, vol. 103, May 23, 2008, 8 pages, American Institute of Physics.
Hoang Quoc D
Infineon - Technologies AG
Slater & Matsil L.L.P.
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