Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-24
2010-02-02
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S648000, C438S656000, C438S674000, C438S677000, C438S680000, C257S750000, C257S751000, C257S761000, C257S763000, C257S768000
Reexamination Certificate
active
07655567
ABSTRACT:
The methods described herein relate to deposition of low resistivity, highly conformal tungsten nucleation layers. These layers serve as a seed layers for the deposition of a tungsten bulk layer. The methods are particularly useful for tungsten plug fill in which tungsten is deposited in high aspect ratio features. The methods involve depositing a nucleation layer by a combined PNL and CVD process. The substrate is first exposed to one or more cycles of sequential pulses of a reducing agent and a tungsten precursor in a PNL process. The nucleation layer is then completed by simultaneous exposure of the substrate to a reducing agent and tungsten precursor in a chemical vapor deposition process. In certain embodiments, the process is performed without the use of a borane as a reducing agent.
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Chan Lana Hiului
Gao Juwen
Wongsenakhum Panya
Khosraviani Arman
Novellus Systems Inc.
Vu David
Weaver Austin Villeneuve & Sampson LLP
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