Systems and methods for forming niobium and/or vanadium...

Details Systems and methods for forming niobium and/or vanadium... Systems and methods for forming niobium and/or vanadium...

2009-01-12

2010-11-23

Lund, Jeffrie R (Department: 1716)

Coating apparatus

Gas or vapor deposition

Reexamination Certificate

active

07837797

ABSTRACT:
A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.

REFERENCES:
patent: 5344948 (1994-09-01), Verkade
patent: 6127192 (2000-10-01), Uhlenbrock et al.
patent: 6133161 (2000-10-01), Uhlenbrock et al.
patent: 6352580 (2002-03-01), Uhlenbrock et al.
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6452017 (2002-09-01), Uhlenbrock et al.
patent: 6545791 (2003-04-01), McCaughan et al.
patent: 6632279 (2003-10-01), Ritala et al.
patent: 6664159 (2003-12-01), Vaartstra et al.
patent: 6797337 (2004-09-01), Dando et al.
patent: 6831315 (2004-12-01), Raaijmakers et al.
patent: 6874335 (2005-04-01), Uhlenbrock
patent: 6908639 (2005-06-01), Basceri et al.
patent: 6958300 (2005-10-01), Vaartstra et al.
patent: 6967154 (2005-11-01), Meng et al.
patent: 7029985 (2006-04-01), Basceri et al.
patent: 7087482 (2006-08-01), Yeo et al.
patent: 7090727 (2006-08-01), Carpenter et al.
patent: 7101779 (2006-09-01), Vaartstra et al.
patent: 7164165 (2007-01-01), Basceri et al.
patent: 7250367 (2007-07-01), Vaartstra et al.
patent: 7273660 (2007-09-01), Basceri et al.
patent: 7276414 (2007-10-01), Violette et al.
patent: 7279732 (2007-10-01), Meng et al.
patent: 7323738 (2008-01-01), Basceri et al.
patent: 7326984 (2008-02-01), Basceri et al.
patent: 7390710 (2008-06-01), Derderian et al.
patent: 7482037 (2009-01-01), Derderian et al.
patent: 7560793 (2009-07-01), Derderian et al.
patent: 7572731 (2009-08-01), Millward et al.
patent: 7589029 (2009-09-01), Derderian et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2002/0142588 (2002-10-01), Basceri et al.
patent: 2002/0192509 (2002-12-01), Basceri et al.
patent: 2003/0033984 (2003-02-01), Carpenter et al.
patent: 2004/0009679 (2004-01-01), Yeo et al.
patent: 2004/0134427 (2004-07-01), Derderian et al.
patent: 2004/0235285 (2004-11-01), Kang et al.
patent: 2004/0255859 (2004-12-01), Dando et al.
patent: 2005/0287819 (2005-12-01), Vaartstra et al.
patent: 2006/0040480 (2006-02-01), Derderian et al.
patent: 2006/0065635 (2006-03-01), Derderian et al.
patent: 2006/0258093 (2006-11-01), Violette et al.
patent: 2007/0006798 (2007-01-01), Vaartstra et al.
patent: 2007/0045856 (2007-03-01), Vaartstra et al.
patent: 2007/0063259 (2007-03-01), Derderian et al.
patent: 2007/0063262 (2007-03-01), Violette et al.
patent: 2007/0148932 (2007-06-01), Derderian et al.
patent: 2008/0210157 (2008-09-01), Vaartstra et al.
patent: 2008/0251828 (2008-10-01), Meng et al.
patent: 2008/0272421 (2008-11-01), Bhat
patent: 2009/0127105 (2009-05-01), Derderian et al.
patent: WO 02/075444 (2002-09-01), None
Hawley, G.G., “The Condensed Chemical Dictionary,” 1981, 10thEdition, Van Nostrand Reinhold Co., New York, 225.
Inorgtech Epichem, Catalog Sheet listing Product Codes 013-015; available on or before Dec. 20, 2002: p. 7.
Vehkamaki et al., “Growth of SrTiO3and BaTiO3Thin Films by Atomic Layer Deposition,”Electrochemical and Solid-State Letters, Oct. 1999;2(10):504-506.

Affiliated with

Also associated with

Rating

Systems and methods for forming niobium and/or vanadium... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Systems and methods for forming niobium and/or vanadium..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems and methods for forming niobium and/or vanadium... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4181372