Nitride semiconductor light-emitting device, method of...

Details Nitride semiconductor light-emitting device, method of... Nitride semiconductor light-emitting device, method of...

2009-02-05

2010-12-28

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S014000, C257S617000, C257S622000, C257S627000, C257SE33008, C257SE29024

Reexamination Certificate

active

07858992

ABSTRACT:
A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region102and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

REFERENCES:
patent: 6455877 (2002-09-01), Ogawa et al.
patent: 6667184 (2003-12-01), Motoki et al.
patent: 6720586 (2004-04-01), Kidoguchi et al.
patent: 2001/0023946 (2001-09-01), Ueta et al.
patent: 2002/0054617 (2002-05-01), Tsuda et al.
patent: 2004/0041156 (2004-03-01), Tsuda et al.
patent: 2005/0042787 (2005-02-01), Ito et al.
patent: 2005/0141577 (2005-06-01), Ueta et al.
patent: 1 304 749 (2003-04-01), None
patent: 1304749 (2003-04-01), None
patent: 2000-82676 (2000-03-01), None
patent: 2000-164929 (2000-06-01), None
patent: 2000-223743 (2000-08-01), None
patent: 2000-223743 (2000-11-01), None
patent: 2001-102307 (2001-04-01), None
patent: 2001-148532 (2001-05-01), None
patent: 2001-160539 (2001-06-01), None
patent: 2002-158405 (2002-05-01), None
patent: 2003-037288 (2003-02-01), None
patent: 2003-124115 (2003-04-01), None
patent: 2003-124572 (2003-04-01), None
patent: 2003-124573 (2003-04-01), None
patent: 2004-88134 (2004-03-01), None
patent: 2005-56974 (2005-03-01), None
patent: WO-02/065556 (2002-08-01), None
Nagahama, S., et al. (2000). “High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates,” Jpn. J. Appl. Phys. 39(2):647-650.
Ueta et al., U.S. Office Action mailed Jun. 22, 2006, directed to U.S. Appl. No. 10/831,659; 6 pages.
Ueta et al., U.S. Office Action mailed Feb. 9, 2007, directed to U.S. Appl. No. 10/831,659; 7 pages.
Ueta et al., U.S. Office Action mailed Oct. 26, 2007, directed to U.S. Appl. No. 10/831,659; 6 pages.
Ueta et al., U.S. Office Action mailed Sep. 25, 2008, directed to U.S. Appl. No. 11/435,932; 10 pages.

Affiliated with

Also associated with

Rating

Nitride semiconductor light-emitting device, method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor light-emitting device, method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor light-emitting device, method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4181356