Method for patterning a low activation energy photoresist

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Including heating

Reexamination Certificate

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C430S270100, C430S326000, C430S905000, C430S907000, C430S910000

Reexamination Certificate

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07820369

ABSTRACT:
Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCLin the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.

REFERENCES:
patent: 4356296 (1982-10-01), Griffith et al.
patent: 4365049 (1982-12-01), Tsunoda et al.
patent: 4452998 (1984-06-01), Griffith et al.
patent: 5391587 (1995-02-01), Wu
patent: 5665527 (1997-09-01), Allen et al.
patent: 5919597 (1999-07-01), Sinta et al.
patent: 6027856 (2000-02-01), Nozaki et al.
patent: 6037097 (2000-03-01), Bucchignano et al.
patent: 6043003 (2000-03-01), Bucchignano et al.
patent: 6074801 (2000-06-01), Iwasa et al.
patent: 6106998 (2000-08-01), Maeda et al.
patent: 6140010 (2000-10-01), Iwasa et al.
patent: 6146806 (2000-11-01), Maeda et al.
patent: 6265135 (2001-07-01), Kodama et al.
patent: 6319650 (2001-11-01), Gelorme et al.
patent: 2002/0150835 (2002-10-01), Nishi et al.
patent: 2003/0027077 (2003-02-01), Zampini et al.
patent: 2003/0091928 (2003-05-01), Choi
patent: 2004/0038150 (2004-02-01), Bae et al.
patent: 2004/0265733 (2004-12-01), Houlihan et al.
patent: 61281116 (1986-11-01), None
patent: WO 01/86352 (2001-11-01), None
patent: WO 02/079287 (2002-10-01), None
patent: WO 03/040827 (2003-05-01), None
U.S. Appl. No. 10/716,785, filed Nov. 19, 2003, Huang et al.
U.S. Appl. No. 10/729,169, filed Dec. 4, 2003, Robert David Allen et al.
Bae et al. (2003), “Rejuvenation of 248 nm Resist Backbones for 157 nm Lithogrpahy,”Journal of Photopolymer Science and Technology14(4):613-620.
Ito et al. (2001), “Polymer Design for 157 nm Chemically Amplified Resists,”Advances In Resist Technology And Processing XVIII, Proceedings Of SPIE4345:273-284.
Hinsberg et al. (2000), “Effect of Resist Components on Image Spreading During Postexposure Bake of Chemically Amplified Resists,”Advances in Resist Technology and Processing XVII, Proceedings of SPIE3999:148-160.
Hinsberg et al. (2003), “Extendibility of Chemically Amplified Resists: Another Brick Wall?,”Advances in Resist Technology and Processing XX, Proceedings of SPIE5039:1-14.
Houle et al. (2000), “Determination of Coupled Acid Catalysis-Diffusion Processes in a Positive-Tone Chemically Amplified Photoresist,”J. Vac. Sci. Technol. B18(4):1874-1885.
Kunz et al. (2001), “Experimental VUV Absorbance Study of Fluorine-Functionalized Polystyrenes,”Advances in Resist Technology and Processing XVIII, Proceedings of SPIE4345:285-295.
U.S. Appl. No. 10/604,082, filed Jun. 25, 2003, Hinsberg et al.
Allen et al. (1997), “Deep-UV Resist Technology: The Evolution of Materials and Processes for 250-nm Lithography and Beyond,”Handbook of Microlithography, Micromachining, and Microfabricationvol. 1: Microlithography, Chapter 4, pp. 321-375, P. Rai-Choudhury, Editor, SPIE Optical Engineering Press.
Fedynyshyn et al. (2001), “High Resolution Fluorocarbon Based Resist for 157-nm Lithography,”Advances in Resist Technology And Processing XVIII, Proceedings of SPIE4345:296-307.
Kodama et al. (2002), “Synthesis of Novel Fluoropolymer for 157nm Photoresists by Cyclo-Polymerization,”Advances in Resist Technology and Processing XIX, Proceedings of SPIE4690:76-83.
Reichmanis et al. (1991), “Chemical Amplification Mechanisms for Microlithography,”Chem. Mater.3(3):394-407.
Urry et al. (1968), “Multiple Multicenter Reactions of Perfluoro Ketones with Olefins,”The Journal of Organic Chemistry33(6):2302-2310.

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