Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-05
2010-10-26
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27067
Reexamination Certificate
active
07821070
ABSTRACT:
Trig modulation electrostatic discharge (ESD) protection devices are presented. An ESD protection device includes a semiconductor substrate. A high voltage N-well (HVNW) region is formed in the semiconductor substrate. An NDD region, a first P-body region and a second P-body region are formed in the HVNW region, wherein the first P-body region is separated from the second P-body region with a predetermined distance, and wherein the NDD region is isolated from the first P-body region with an isolation region. An N+doped source region is disposed in the NDD region. An N+doped region is disposed in the first P-body region. A P+doped region is disposed in the second P-body region. A first gate is disposed between the N+doped region and the isolation region, and a second gate is disposed between the N+doped region and the P+doped region.
REFERENCES:
patent: 6452235 (2002-09-01), Hsia
patent: 6650165 (2003-11-01), Mallikarjunaswamy
patent: 2007/0091530 (2007-04-01), Chen
patent: 2008/0007882 (2008-01-01), Bernard et al.
Chiou Hwa-Chyi
Jou Yeh-Ning
Kuo W. Wendy
Purvis Sue
Vanguard International Semiconductor Corporation
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