Memory having a dummy bitline for timing control

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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Details

C365S210150, C365S230010, C365S233100, C365S205000, C365S207000, C365S208000

Reexamination Certificate

active

07746716

ABSTRACT:
A memory having at least one memory array block, the at least one memory array block comprising N wordlines, wherein N is greater than one, is provided. The memory comprises a plurality of sense amplifiers coupled to the at least one memory array block. The memory further comprises at least one dummy bitline, wherein the at least one dummy bitline comprises M dummy bitcells, wherein M is equal to N. The memory further comprises a timing circuit coupled to the at least one dummy bitline, wherein the timing circuit comprises at least one stack of pull-down transistors coupled to a sense circuit for generating a latch control output signal used for timing control of memory accesses. Timing control may include generating a sense trigger signal to enable the plurality of sense amplifiers for read operations and/or generating a local reset signal for terminating memory accesses, such as disabling the plurality of write drivers for write operations.

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