Semiconductor apparatus

Details Semiconductor apparatus Semiconductor apparatus

2008-01-24

2010-12-28

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S330000, C257S342000, C257SE29262

Reexamination Certificate

active

07859052

ABSTRACT:
A semiconductor apparatus includes: a first first-conductivity-type semiconductor layer; a second first-conductivity-type semiconductor layer provided on a major surface of the first first-conductivity-type semiconductor layer; a third second-conductivity-type semiconductor layer forming a periodic array structure in combination with the second first-conductivity-type semiconductor layer in a lateral direction generally parallel to the major surface of the first first-conductivity-type semiconductor layer; and a sixth first-conductivity-type semiconductor layer provided on the major surface of the first first-conductivity-type semiconductor layer in a termination section outside the periodic array structure. The second first-conductivity-type semiconductor layer has an impurity concentration varying in the lateral direction and the impurity concentration is minimized at a center in the lateral direction. An impurity concentration in the sixth first-conductivity-type semiconductor layer is not higher than the impurity concentration at the center of the second first-conductivity-type semiconductor layer.

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