Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-12-20
2010-10-26
Berman, Jack I (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S427000, C250S492300, C250S398000, C250S3960ML, C438S010000, C438S301000, C438S303000, C315S306000
Reexamination Certificate
active
07820987
ABSTRACT:
An approach for predicting dose repeatability in an ion implantation is described. In one embodiment, an ion source is tuned to generate an ion beam with desired beam current. Beam current measurements are obtained from the tuned ion beam. The dose repeatability is predicted for the ion implantation as a function of the beam current measurements.
REFERENCES:
patent: 6908836 (2005-06-01), Murrell et al.
patent: 2005/0263721 (2005-12-01), Renau et al.
patent: 2006/0097196 (2006-05-01), Graf et al.
Evans Morgan
Hussey Norman E.
Padmanabhan Rekha
Walther Steven R.
Berman Jack I
Sahu Meenakshi S
Varian Semiconductor Equipment Associates Inc.
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