Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-09-05
2010-02-16
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257SE25008, C257SE25009, C257SE51022
Reexamination Certificate
active
07663147
ABSTRACT:
A display apparatus and method of forming the same comprise an insulating substrate; a thin film transistor formed on the insulating substrate; a first electrode electrically connected to the thin film transistor and having a first maximum roughness; a buffer layer formed on the first electrode and having a second maximum roughness lower than the first maximum roughness; an organic emission layer formed on the buffer layer; and a second electrode formed on the organic emission layer. Accordingly, it is an aspect of the present invention to provide a display apparatus and method of manufacturing the same which reduce the number of defects due to roughness of a pixel electrode.
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Jung Jae-hoon
Kim Nam-deog
Cantor & Colburn LLP
Hoang Quoc D
Samsung Electronics Co,. Ltd.
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