Semiconductor component arrangement having a power...

Details Semiconductor component arrangement having a power... Semiconductor component arrangement having a power...

2007-02-01

2010-11-30

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S334000, C257S332000, C257S330000, C257S338000, C257S339000, C257S331000, C257SE21371, C257SE21387, C257SE21403, C257SE21441, C257SE21448, C257SE21452

Reexamination Certificate

active

07843006

ABSTRACT:
A semiconductor component arrangement includes a power transistor and a temperature measurement circuit. The power transistor includes a gate electrode, a source zone, a drain zone and a body zone. The body zone is arranged in a first semiconductor zone of a first conduction type. The temperature measuring circuit comprises a temperature-dependent resistor and an evaluation circuit coupled to the temperature-dependent resistor. The resistor is formed by a portion of said first semiconductor zone.

REFERENCES:
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patent: 6948847 (2005-09-01), Pihet et al.
patent: 2005/0275013 (2005-12-01), Sander et al.
patent: 38 31 012 (1990-03-01), None
patent: 203 15 053 (2004-01-01), None
patent: 102004026233 (2005-12-01), None
Baliga, B. Jayant.Power Semiconductor Devices. Boston, PWS Publishing Company: 1996. p. 412-414. (5 Pages).

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