Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-04-22

2010-10-12

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S652000, C438S280000, C438S619000, C257S776000, C257SE23168

Reexamination Certificate

active

07812451

ABSTRACT:
A semiconductor device includes a first wiring layer, a second wiring layer and a third wiring layer. The first wiring layer is formed on a semiconductor substrate. The second and the third wiring layer wiring layers are arranged in a direction intersecting with the first wiring layer on respective sides of the wiring layer. An air bridge wiring intersects the second and third wiring layers sandwiching an air layer above the first wiring layer therewith. The overall shape of the air bridge wiring has an upward convex curvature in an arch shape and the transverse sectional shape of the air bridge wiring is in the form of a downward concave curvature.

REFERENCES:
patent: 5561085 (1996-10-01), Gorowitz et al.
patent: 5757072 (1998-05-01), Gorowitz et al.
patent: 5817446 (1998-10-01), Lammert
patent: 6261934 (2001-07-01), Kraft et al.
patent: 6268262 (2001-07-01), Loboda
patent: 6504189 (2003-01-01), Matsuda et al.
patent: 5-152452 (1993-06-01), None
patent: 5-218213 (1993-08-01), None
patent: 6-89940 (1994-03-01), None
patent: 7-135251 (1995-05-01), None
patent: 8-236628 (1996-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4172694