Semiconductor device and manufacturing method thereof

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S637000

Reexamination Certificate

active

07820548

ABSTRACT:
A result of formation of an opening in a semiconductor substrate can be judged without cutting a semiconductor wafer and observing a cross-section of the cut wafer. A semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, an opening formed in the semiconductor substrate to expose the pad electrode, a wiring layer connected with the pad electrode through the opening and a monitoring opening formed in a scribe line to monitor a result of the formation of the opening.

REFERENCES:
patent: 5618752 (1997-04-01), Gaul
patent: 6225227 (2001-05-01), Aizawa
patent: 2003/0230805 (2003-12-01), Noma et al.
patent: 1204149 (1999-01-01), None
patent: 1453865 (2003-11-01), None
patent: 1376678 (2004-01-01), None
patent: 1416529 (2004-05-01), None
patent: 11-204525 (1999-07-01), None
patent: 2003-309221 (2003-10-01), None
patent: 2003-0058309 (2003-07-01), None
European Search Report mailed Jun. 15, 2009, directed to corresponding European Application No. 05021359.4; (6 pages).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4171171

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.