Semiconductor memory device and method for fabricating...

Details Semiconductor memory device and method for fabricating... Semiconductor memory device and method for fabricating...

2008-02-27

2010-10-26

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257SE21645, C438S003000

Reexamination Certificate

active

07821049

ABSTRACT:
According to an aspect of the present invention, there is provided a semiconductor memory device comprising, a first transistor and a second transistor formed on a semiconductor substrate, a memory capacitor formed above the first transistor, the memory capacitor being connected to the first transistor, a dummy memory capacitor formed above the second transistor, a wiring layer formed above the memory capacitor and the dummy memory capacitor, the wiring layer being connected to the first transistor and the memory capacitor, a first plug connecting between the second transistor and the dummy memory capacitor, and a second plug connecting between the dummy memory capacitor and the wiring layer.

REFERENCES:
patent: 5903492 (1999-05-01), Takashima
patent: 6603161 (2003-08-01), Kanaya et al.
patent: 6768151 (2004-07-01), Kasai
patent: 6800890 (2004-10-01), Wohlfahrt et al.
patent: 7022531 (2006-04-01), Ozaki et al.
patent: 2002/0033494 (2002-03-01), Ozaki et al.
patent: 2005/0118795 (2005-06-01), Hidaka et al.

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