Semiconductor device including trench gate transistor and...

Details Semiconductor device including trench gate transistor and... Semiconductor device including trench gate transistor and...

2008-07-17

2010-10-26

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29262

Reexamination Certificate

active

07821060

ABSTRACT:
A semiconductor device includes an active region having a groove, a gate insulating film, and a gate electrode. The gate electrode may include first and second layers. The first layer extends along the gate insulating film. The first layer is electrically conductive. The second layer extends along the first layer. The second layer is separate from the gate insulating film by the first layer.

REFERENCES:
patent: 7045858 (2006-05-01), Matsuda et al.
patent: 7432155 (2008-10-01), Park
patent: 7566645 (2009-07-01), Lee
patent: 2006/0091453 (2006-05-01), Matsuda et al.
patent: 2006/0289931 (2006-12-01), Kim et al.
patent: 9-172064 (1997-06-01), None
patent: 2003-7676 (2003-01-01), None
patent: 2005-243932 (2005-09-01), None
patent: 2006-66611 (2006-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor device including trench gate transistor and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including trench gate transistor and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including trench gate transistor and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4168552