Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-11-06
2010-02-02
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S662000, C257SE21134, C257SE29278
Reexamination Certificate
active
07655513
ABSTRACT:
After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.
REFERENCES:
patent: 4879176 (1989-11-01), Ouderkirk et al.
patent: 5210050 (1993-05-01), Yamazaki et al.
patent: 5212116 (1993-05-01), Yu
patent: 5244819 (1993-09-01), Yue
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5525550 (1996-06-01), Kato
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5578520 (1996-11-01), Zhang et al.
patent: 5604153 (1997-02-01), Tsubouchi et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5693541 (1997-12-01), Yamazaki et al.
patent: 5773847 (1998-06-01), Hayakawa
patent: 5776812 (1998-07-01), Takahashi et al.
patent: 5786241 (1998-07-01), Shimada
patent: 5789284 (1998-08-01), Yamazaki et al.
patent: 5795795 (1998-08-01), Kousai et al.
patent: 5808321 (1998-09-01), Mitanaga et al.
patent: 5828084 (1998-10-01), Noguchi et al.
patent: 5843833 (1998-12-01), Ohtani et al.
patent: 5861337 (1999-01-01), Zhang et al.
patent: 5899709 (1999-05-01), Yamazaki et al.
patent: 5907770 (1999-05-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5943560 (1999-08-01), Chang et al.
patent: 5956579 (1999-09-01), Yamazaki et al.
patent: 5956581 (1999-09-01), Yamazaki et al.
patent: 5960323 (1999-09-01), Wakita et al.
patent: 6027960 (2000-02-01), Kusumoto et al.
patent: 6048588 (2000-04-01), Engelsberg
patent: 6048758 (2000-04-01), Yamazaki et al.
patent: 6066516 (2000-05-01), Miyasaka
patent: 6071766 (2000-06-01), Yamazaki et al.
patent: 6071796 (2000-06-01), Voutsas
patent: 6072194 (2000-06-01), Wakita et al.
patent: 6093587 (2000-07-01), Ohtani
patent: 6096581 (2000-08-01), Zhang et al.
patent: 6107639 (2000-08-01), Yamazaki et al.
patent: 6121660 (2000-09-01), Yamazaki et al.
patent: 6124154 (2000-09-01), Miyasaka
patent: 6143661 (2000-11-01), Kousai et al.
patent: 6160279 (2000-12-01), Zhang et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6242291 (2001-06-01), Kusumoto et al.
patent: 6242292 (2001-06-01), Yamazaki et al.
patent: 6281057 (2001-08-01), Aya et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6300176 (2001-10-01), Zhang et al.
patent: 6304329 (2001-10-01), Nitta et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6329269 (2001-12-01), Hamada et al.
patent: 6331457 (2001-12-01), Yamazaki et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6337229 (2002-01-01), Yamazaki et al.
patent: 6337259 (2002-01-01), Ueda et al.
patent: 6348369 (2002-02-01), Kusumoto et al.
patent: 6388270 (2002-05-01), Yamazaki et al.
patent: 6399454 (2002-06-01), Yamazaki
patent: 6433363 (2002-08-01), Yamazaki et al.
patent: 6436745 (2002-08-01), Gotou et al.
patent: 6444390 (2002-09-01), Yamazaki et al.
patent: 6444506 (2002-09-01), Kusumoto et al.
patent: 6444507 (2002-09-01), Miyasaka
patent: 6444509 (2002-09-01), Noguchi et al.
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6479333 (2002-11-01), Takano et al.
patent: 6479837 (2002-11-01), Ogawa et al.
patent: 6482684 (2002-11-01), Yamazaki
patent: 6486437 (2002-11-01), Tanabe
patent: 6489189 (2002-12-01), Yamazaki et al.
patent: 6517642 (2003-02-01), Horie et al.
patent: 6528359 (2003-03-01), Kusumoto et al.
patent: 6534353 (2003-03-01), Kuramasu et al.
patent: 6559036 (2003-05-01), Ohtani et al.
patent: 6608326 (2003-08-01), Shinagawa et al.
patent: RE38266 (2003-10-01), Yamazaki et al.
patent: 6638797 (2003-10-01), Noguchi et al.
patent: 6646287 (2003-11-01), Ono et al.
patent: 6673126 (2004-01-01), Miyasaka
patent: 6677222 (2004-01-01), Mishima et al.
patent: 6680223 (2004-01-01), Yamazaki et al.
patent: 6690068 (2004-02-01), Yamazaki et al.
patent: 6703265 (2004-03-01), Asami et al.
patent: 6706568 (2004-03-01), Nakajima
patent: 6759677 (2004-07-01), Yamazaki et al.
patent: 6764928 (2004-07-01), Ohtani
patent: 6787407 (2004-09-01), Nakamura et al.
patent: 6787807 (2004-09-01), Yamazaki et al.
patent: 6803296 (2004-10-01), Miyairi
patent: 6821827 (2004-11-01), Nakamura et al.
patent: 6828179 (2004-12-01), Yamazaki et al.
patent: 6828587 (2004-12-01), Yamazaki et al.
patent: 6855584 (2005-02-01), Yamazaki et al.
patent: 6906344 (2005-06-01), Yamazaki et al.
patent: 6913956 (2005-07-01), Hamada et al.
patent: 6924506 (2005-08-01), Zhang et al.
patent: 6924528 (2005-08-01), Yamazaki et al.
patent: 6962837 (2005-11-01), Yamazaki
patent: 6991976 (2006-01-01), Yamazaki et al.
patent: 6998639 (2006-02-01), Ohtani et al.
patent: 7015083 (2006-03-01), Yamazaki et al.
patent: 7087504 (2006-08-01), Nakajima et al.
patent: 7129120 (2006-10-01), Yamazaki
patent: 7153729 (2006-12-01), Yamazaki et al.
patent: 7186600 (2007-03-01), Ohtani et al.
patent: 7271042 (2007-09-01), Kusumoto et al.
patent: 7291523 (2007-11-01), Yamazaki et al.
patent: 7384860 (2008-06-01), Nakamura et al.
patent: 2001/0003659 (2001-06-01), Aya et al.
patent: 2001/0034088 (2001-10-01), Nakamura et al.
patent: 2002/0008286 (2002-01-01), Yamazaki et al.
patent: 2002/0014625 (2002-02-01), Asami et al.
patent: 2002/0038889 (2002-04-01), Yamazaki et al.
patent: 2002/0043660 (2002-04-01), Yamazaki et al.
patent: 2002/0043662 (2002-04-01), Yamazaki et al.
patent: 2003/0071307 (2003-04-01), Noguchi et al.
patent: 2003/0139066 (2003-07-01), Kusumoto et al.
patent: 2003/0148565 (2003-08-01), Yamanaka
patent: 2003/0160239 (2003-08-01), Shinagawa et al.
patent: 2003/0207503 (2003-11-01), Yamazaki et al.
patent: 2004/0142581 (2004-07-01), Nakajima
patent: 2005/0019997 (2005-01-01), Kusumoto et al.
patent: 2005/0054181 (2005-03-01), Nakamura et al.
patent: 2005/0112850 (2005-05-01), Yamazaki et al.
patent: 2006/0131583 (2006-06-01), Ohtani et al.
patent: 2006/0148218 (2006-07-01), Yamazaki et al.
patent: 2007/0059949 (2007-03-01), Yamazaki et al.
patent: 2007/0105288 (2007-05-01), Miyairi et al.
patent: 2007/0117293 (2007-05-01), Ohtani et al.
patent: 2007/0196960 (2007-08-01), Kasahara et al.
patent: 0 993 045 (2000-04-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-183540 (1995-07-01), None
patent: 07-235498 (1995-09-01), None
patent: 08-008179 (1996-01-01), None
patent: 08-255916 (1996-10-01), None
patent: 09-102467 (1997-04-01), None
patent: 09-205213 (1997-08-01), None
patent: 09-260681 (1997-10-01), None
patent: 10-106951 (1998-04-01), None
patent: 10-341024 (1998-12-01), None
patent: 11-031660 (1999-02-01), None
patent: 2000-081642 (2000-03-01), None
patent: 2000-340503 (2000-12-01), None
patent: 2001-060551 (2001-03-01), None
patent: 2001-250777 (2001-09-01), None
patent: 2002-093738 (2002-03-01), None
patent: 2003-068642 (2003-03-01), None
patent: 2005-327865 (2005-11-01), None
K. Suga et al., “The Effect of a Laser Annealing Ambient on the Morphology and TFT Performance of Poly-Si Films,” SID 00 Digest, pp. 534-537.
Sze, Physics of Semiconductor Devices, 2ndEdition, pp. 386, Jan. 1, 1981.
Fellar, “An Introduction to Probability Theory and Its Applications,” vol. 1, 3rdEdition, pp. 243-245, Jan. 1, 1968.
Bozzo et al.,'“Chemical Vapor Deposition of Silicon-Germanium Heterostructures,” Journal of Crystal Growth, vol. 216, pp. 171-184, Jan. 1, 2000.
Miyairi Hidekazu
Nakajima Setsuo
Yamazaki Shunpei
Lindsay, Jr. Walter L
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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