Devices and circuits based on magnetic tunnel junctions...

Details Devices and circuits based on magnetic tunnel junctions... Devices and circuits based on magnetic tunnel junctions...

2006-09-13

2010-12-14

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S009000, C257SE29167, C257SE43004

Reexamination Certificate

active

07851840

ABSTRACT:
Devices having magnetic or magnetoresistive tunnel junctions (MTJS) have a multilayer insulator barrier layer to produce balanced write switching currents in the device circuitry, or to produce the magnetic devices with balanced critical spin currents required for spin torque transfer induced switching of the magnetization, or both for the MTJs under both the forward and reversed bias directions.

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