Method of processing organic film using plasma etching and...

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S710000

Reexamination Certificate

active

07658859

ABSTRACT:
A method of forming an organic film disposes a substrate on which the organic film is formed in a chamber capable of reducing a pressure therein, introduces a gas including a deuterium compound or a trideuterium compound in the chamber, to generate a plasma by ionizing the gas; and etches and patterning the organic film by the plasma.

REFERENCES:
patent: 5730808 (1998-03-01), Yang et al.
patent: 6277733 (2001-08-01), Smith
patent: 6444533 (2002-09-01), Lyding et al.
patent: 6599829 (2003-07-01), Smith et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6888204 (2005-05-01), Lyding et al.
patent: 7001848 (2006-02-01), Smith et al.
patent: 2002/0127840 (2002-09-01), Smith et al.
patent: 2003/0216026 (2003-11-01), Mukherjee-Roy et al.
patent: 2004/0121609 (2004-06-01), Lee et al.
patent: 2006/0281312 (2006-12-01), Smith et al.
patent: 6-84841 (1994-03-01), None
patent: 2002-93778 (2002-03-01), None
patent: 2002-543613 (2002-12-01), None
patent: WO 2004/027826 (2004-04-01), None
Notification of Reason for Rejection issued by the Japanese Patent Office on Nov. 4, 2008, for Japanese Patent Application No. 2005-032169, and English-language translation thereof.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of processing organic film using plasma etching and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of processing organic film using plasma etching and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of processing organic film using plasma etching and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4163909

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.