Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2006-02-07
2010-02-09
Culbert, Roberts (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C438S710000
Reexamination Certificate
active
07658859
ABSTRACT:
A method of forming an organic film disposes a substrate on which the organic film is formed in a chamber capable of reducing a pressure therein, introduces a gas including a deuterium compound or a trideuterium compound in the chamber, to generate a plasma by ionizing the gas; and etches and patterning the organic film by the plasma.
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Notification of Reason for Rejection issued by the Japanese Patent Office on Nov. 4, 2008, for Japanese Patent Application No. 2005-032169, and English-language translation thereof.
Culbert Roberts
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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