Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2008-10-27
2010-12-14
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S175000, C365S105000, C365S072000
Reexamination Certificate
active
07852667
ABSTRACT:
A memory cell that includes a first magnetic layer, the magnetization of which is free to rotate under the influence of spin torque; a tunneling layer comprising a magnetic resonant tunneling diode (MRTD); and a second magnetic layer, wherein the magnetization of the second magnetic layer is pinned, wherein the tunneling layer is between the first magnetic layer and the second magnetic layer.
REFERENCES:
patent: 5191223 (1993-03-01), Munekata
patent: 5646419 (1997-07-01), McCaldin et al.
patent: 6703645 (2004-03-01), Ohno
patent: 6842368 (2005-01-01), Hayakawa
patent: 6965522 (2005-11-01), Lung et al.
patent: 7037807 (2006-05-01), Murakami et al.
patent: 7138648 (2006-11-01), Kneissl et al.
patent: 7430135 (2008-09-01), Huai
patent: 7485503 (2009-02-01), Brask et al.
patent: 7486551 (2009-02-01), Li
patent: 7486552 (2009-02-01), Apalkov
patent: 7489541 (2009-02-01), Pakala
patent: 7518835 (2009-04-01), Huai
patent: 7576956 (2009-08-01), Huai
patent: 2005/0282379 (2005-12-01), Saito
patent: 2007/0096229 (2007-05-01), Yoshikawa
patent: 2007/0230233 (2007-10-01), Takahashi
patent: 2008/0310219 (2008-12-01), Chen
patent: 2009/0050991 (2009-02-01), Nagai
patent: 2009/0302403 (2009-12-01), Nguyen
J.A. Folk et al., A Gate-Controlled Bidirectional Spin Filter Using Quantum Coherence, Science, vol. 299, Jan. 31, 2003, pp. 679-682.
New Class of Materials: Half-Metallic Ferromagnets, R.A. de Groot, F.M. Mueller, P.G. Engen, and K.H. Buschow, Physics Review Letters, 50, 2024 (1983).
Vurgaftman et al., Spin-Polarizing Properties of the InAs/(AISb)/GaMnSb/(AISb/InAs Ferromagnetic Resonant Interband Tunneling Diode, Physical Review B 67, 12509 (2003).
U.S. Appl. No. 12/175,545, filed Jul. 18, 2008, Lou.
U.S. Appl. No. 12/258,492, filed Oct. 27, 2008, Lou.
U.S. Appl. No. 12/258,491, filed Oct. 27, 2008, Lou.
Campbell Nelson Whipps LLC
Lam David
Seagate Technology LLC
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