Method of manufracturing increasing reliability of...

Details Method of manufracturing increasing reliability of... Method of manufracturing increasing reliability of...

2007-11-30

2010-11-09

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S643000, C438S508000, C075S672000, C075S673000, C075S674000

Reexamination Certificate

active

07829460

ABSTRACT:
By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.

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International Search Report and Written Opinion mailed Jun. 10, 2008.
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 004 867.1-33 dated Jul. 13, 2007.

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