Solution-based deposition process for metal chalcogenides

Details Solution-based deposition process for metal chalcogenides Solution-based deposition process for metal chalcogenides

2009-01-16

2010-11-16

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S104000, C438S158000, C438S500000, C257SE31029, C257SE21070, C257SE21077, C257SE21078

Reexamination Certificate

active

07833825

ABSTRACT:
A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.

REFERENCES:
patent: 6379585 (2002-04-01), Vecht et al.
patent: 6518086 (2003-02-01), Beck et al.
patent: 6875661 (2005-04-01), Mitzi
patent: 7164147 (2007-01-01), Lee et al.
patent: 7494841 (2009-02-01), Mitzi et al.
patent: 2006/0014365 (2006-01-01), Kugler et al.
K. Chrissafis, Crystal/Glass Phase Change in KSB5S8 Studied through Thermal Analysis Techniques, Chem. Mater., vol. 16, No. 10, 2004, pp. 1932-1937.

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