Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-01-16
2010-06-29
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000, C257S535000, C257SE39010, C257SE33010
Reexamination Certificate
active
07745869
ABSTRACT:
A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi2O2)2+(Am−1BmO3m+1)2−or Bi2Am−1BmO3m+3, wherein “m” is an even number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W; and Bi in the bismuth layer compound is excessively included with respect to the composition formula of (Bi2O2)2+(Am−1BmO3m+1)2−or Bi2Am−1BmO3m+3, and the excessive content of Bi is in a range of 0<Bi<0.5×m mol in of Bi.
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Blum David S
Oliff & Berridg,e PLC
TDK Corporation
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