Light emitting device having a composition modulation layer...

Details Light emitting device having a composition modulation layer... Light emitting device having a composition modulation layer...

2006-09-26

2010-12-14

Pizarro, Marcos D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S185000, C257S201000, C257SE33043, C257S101000, C257S099000

Reexamination Certificate

active

07851824

ABSTRACT:
A light emitting device includes: a light emitting layer; an n-type contact layer made of a compound provided on the light emitting layer; a composition modulation layer provided on the n-type contact layer; and a transparent electrode provided on the composition modulation layer. The composition modulation layer consists of a plurality of elements which constitute the compound. A composition ratio of one of the plurality of elements is higher in the composition modulation layer than in the compound. Alternatively, the light emitting device includes: a light emitting layer; an n-type contact layer made of a compound provided on the light emitting layer; a metal layer provided on the n-type contact layer; and a transparent electrode provided on the metal layer. The metal layer is made of a metal having a lower work function than the compound.

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