SiC semiconductor having junction barrier schottky device

Details SiC semiconductor having junction barrier schottky device SiC semiconductor having junction barrier schottky device

2008-03-31

2010-10-19

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S340000, C257S341000, C257S342000, C257S343000, C257S452000, C257S453000, C257S471000, C257S493000, C257SE29104, C257SE29270

Reexamination Certificate

active

07816733

ABSTRACT:
A semiconductor device having a JBS diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening and an ohmic electrode on the substrate; a terminal structure having a RESURF layer in the drift layer surrounding the cell region; and multiple second conductive type layers in the drift layer on an inner side of the RESURF layer contacting the Schottky electrode. The second conductive type layers are separated from each other. The second conductive type layers and the drift layer provide a PN diode. Each second conductive type layer has a depth larger than the RESURF layer.

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Office Action dated Apr. 28, 2009 from Japan Patent Office in the corresponding JP Application No. 2007-125593 (and English Translation).
Office Action dated Apr. 28, 2009 from Japan Patent Office in the corresponding JP Application No. 2007-125594 (and English Translation).
U.S. Appl. No. 12/078,350, filed Mar. 31, 2008, Okuno et al.
Office Action mailed May 24, 2010 in related U.S. Appl. No. 12/078,350.

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