Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-06-21
2010-10-05
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S163000, C257SE21411
Reexamination Certificate
active
07807516
ABSTRACT:
To provide a manufacturing method in which LDD regions with different widths are formed in a self-aligned manner, and the respective widths are precisely controlled in accordance with each circuit. By using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function formed of a diffraction grating pattern or a semi-transparent film, the width of a region with a small thickness of a gate electrode can be freely set, and the widths of two LDD regions capable of being formed in a self-aligned manner with the gate electrode as a mask can be different in accordance with each circuit. In one TFT, both of two LDD regions with different widths overlap a gate electrode.
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Monoe Shigeharu
Ohnuma Hideto
Coleman W. David
Fish & Richardson P.C.
Kim Sun M
Semiconductor Energy Laboratory Co,. Ltd.
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