Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2006-06-21

2010-10-05

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S163000, C257SE21411

Reexamination Certificate

active

07807516

ABSTRACT:
To provide a manufacturing method in which LDD regions with different widths are formed in a self-aligned manner, and the respective widths are precisely controlled in accordance with each circuit. By using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function formed of a diffraction grating pattern or a semi-transparent film, the width of a region with a small thickness of a gate electrode can be freely set, and the widths of two LDD regions capable of being formed in a self-aligned manner with the gate electrode as a mask can be different in accordance with each circuit. In one TFT, both of two LDD regions with different widths overlap a gate electrode.

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