Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-27
2010-02-16
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S650000, C438S686000, C257SE21584
Reexamination Certificate
active
07662713
ABSTRACT:
A semiconductor device provided with: a first interconnection layer provided on a semiconductor substrate; an interlevel insulation film provided over the first interconnection layer; a barrier layer provided between the first interconnection layer and the interlevel insulation film; and a second interconnection layer of gold provided as an uppermost interconnection layer on the interlevel insulation film. The barrier layer is formed in a region of the first interconnection layer including an interlevel connection opening region of the interlevel insulation, and the region is greater than the interlevel connection opening region. The second interconnection layer is electrically connected to the first interconnection layer via the barrier layer in the interlevel connection opening.
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Nakatani Goro
Tamura Hitoshi
Rabin & Berdo PC
Rohm & Co., Ltd.
Smoot Stephen W
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