Cylindrical channel charge trapping devices with effectively...

Details Cylindrical channel charge trapping devices with effectively... Cylindrical channel charge trapping devices with effectively...

2007-05-31

2010-12-14

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309

Reexamination Certificate

active

07851848

ABSTRACT:
A memory cell comprising: a source region and a drain region separated by a semiconductor channel region, the channel region having a channel surface having an area A1including a first cylindrical region, a first dielectric structure on the channel surface, a dielectric charge trapping structure on the first dielectric structure, a second dielectric structure on the dielectric charge trapping structure, a conductive layer having a conductor surface having an area A2including a second cylindrical region on the second dielectric structure, the conductor surface overlying the dielectric charge trapping structure and the channel surface of the channel region, and the ratio of the area A2to the area A1being greater than or equal to 1.2 are described along with devices thereof and methods for manufacturing.

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