Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-26
2010-02-16
Andújar, Leonardo (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27084, C257SE21646, C257S906000
Reexamination Certificate
active
07663174
ABSTRACT:
A first DRAM section including a first memory cell having a first capacitance and a second DRAM section including a second memory cell having a second capacitance different from the first capacitance are provided on the same semiconductor substrate.
REFERENCES:
patent: 4825268 (1989-04-01), Oowaki
patent: 5138412 (1992-08-01), Hieda et al.
patent: 5696014 (1997-12-01), Figura
patent: 5814547 (1998-09-01), Chang
patent: 5858832 (1999-01-01), Pan
patent: 6300647 (2001-10-01), Hamada et al.
patent: 6313497 (2001-11-01), Iwasa
patent: 6380102 (2002-04-01), Oh
patent: 6418044 (2002-07-01), Laurent
patent: 6677650 (2004-01-01), Fischer et al.
patent: 6731529 (2004-05-01), Jacob et al.
patent: 6858513 (2005-02-01), Fujisawa
patent: 2001/0013619 (2001-08-01), Parekh et al.
patent: 2003/0184953 (2003-10-01), Lee et al.
patent: 2000-223589 (2000-08-01), None
patent: 2000-232076 (2000-08-01), None
Japanese Office Action issued in corresponding Japanese Patent Application No. JP 2003-023542, dated Nov. 14, 2006.
Andújar Leonardo
Harrison Monica D
McDermott Will & Emery LLP
LandOfFree
Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4156315