Termination structure for mosgated device with reduced mask coun

Details Termination structure for mosgated device with reduced mask coun Termination structure for mosgated device with reduced mask coun

1995-03-23

1996-09-17

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257491, 257355, H01L 2978, H01L 2940

Patent

active

055571271

ABSTRACT:
A termination structure for a MOSgated device uses a plurality of series-connected lateral P-MOS devices extending in series, from source to drain of the main device. The P-MOS devices are formed in ring fashion around the periphery of the area being terminated. A plurality of concentric spaced P rings diffused into an N type chip termination area are covered by the main device gate oxide which is, in turn, covered with conductive polysilicon to act as a gate for the P-MOS devices so formed. The innermost P ring of each pair of P rings is connected to its gate to prevent turn on of the N channel device. The breakdown voltage of the termination is the sum of the threshold voltage of the P-MOS transistors. A zener diode can be added to the chain to increase the breakdown voltage of the termination.

REFERENCES:
patent: 4468686 (1984-08-01), Rosenthal
patent: 4567502 (1986-01-01), Nakagawa et al.
patent: 5089864 (1992-02-01), Sakurai

Affiliated with

Also associated with

Rating

Termination structure for mosgated device with reduced mask coun does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Termination structure for mosgated device with reduced mask coun, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Termination structure for mosgated device with reduced mask coun will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-415170