Thin-film transistor and method for forming the same

Details Thin-film transistor and method for forming the same Thin-film transistor and method for forming the same

1994-09-30

1996-09-17

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 67, 257330, 257347, 257401, 257622, 437 40, 437225, 437235, H01L 2976

Patent

active

055571263

ABSTRACT:
A transistor is formed on a substrate of dielectric material. The transistor includes a layer of semiconductor material that is formed on the substrate and has a source region and a drain region. The layer also has a channel region that is in a recess of the substrate and adjacent to the source and drain regions. The channel is self-aligned, as are the light doped source and drain regions.

REFERENCES:
patent: 5135888 (1992-08-01), Chan et al.
patent: 5187114 (1993-02-01), Chan et al.
patent: 5204279 (1993-04-01), Chan et al.
patent: 5334862 (1994-08-01), Manning et al.
patent: 5416346 (1995-05-01), Nagakawa et al.
Murakami, Shuji et al., "A 21 mW 4Mb CMOS SRAM for Battery Operation," IEEE ISSCC, 1991, pp. 46-47, Jan.
Ishibashi, Koichiro et al., "A 1V TFT-Load SRAM Using a Two-Step Word-Voltage Method", IEEE ISSCC, 1992, pp. 206-207, Jan.
Sasaki, Katsuro et al., "A 7ns 140mW 1Mb CMOS SRAM with Current Sense Amplifier," IEEE ISSCC, 1992, pp. 208-209, Jan.
Goto, Hiroyuki et al., "A 3.3V 12ns 16Mb CMOS SRAM," IEEE ISSCC, 1992, pp. 216-217, Jan.
Liu, C. T. et al., "High Reliability and High Performance 0.35 .mu.m Gate-Inverted TFT's for 16 Mbit SRAM Applications Using Self-Aligned LDD Structures," IEEE IEDM, 1992, pp. 823-826, Jan.
Hayden, J. D. et al., "A High-Performance Quadruple Well, Quadruple Poly BiCMOS Process for Fast 16 Mb SRAMs", IEEE IEDM, 1992, pp. 819-822, Jan.
Mead, Carver and Lynn Conway, Introduction to VLSI Systems, Reading, MA, Addison-Wesley, 1980, Jan.

Affiliated with

Also associated with

Rating

Thin-film transistor and method for forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin-film transistor and method for forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin-film transistor and method for forming the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-415164