Etching method and system

Details Etching method and system Etching method and system

2005-06-23

2010-06-01

Paschall, Mark H (Department: 3742)

Electric heating

Metal heating

By arc

C219S121540, C219S121520, C219S121410, C118S7230IR, C156S345470, C315S111510

Reexamination Certificate

active

07728252

ABSTRACT:
An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence (FIG.1).

REFERENCES:
patent: 4795299 (1989-01-01), Boys et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 5573597 (1996-11-01), Lantsman
patent: 6287986 (2001-09-01), Mihara
patent: 6383938 (2002-05-01), Pandhumsoporn et al.
patent: 2004/0219737 (2004-11-01), Quon

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