Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-12
2009-06-02
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21561, C257S759000, C257S760000
Reexamination Certificate
active
07541646
ABSTRACT:
A thin film transistor device according to an embodiment of the invention includes: a thin film transistor having a silicon layer including a source region, a drain region, and a channel region, a gate insulating layer, and a gate electrode formed on an insulating substrate; an interlayer insulating layer covering the thin film transistor; a line electrically connected with the source region, the drain region, and the gate electrode through a contact hole formed in the interlayer insulating layer; a first upper insulating layer covering the line and the interlayer insulating layer and smoothing out stepped portions of the line and irregularities of a surface of the interlayer insulating layer; and a second upper insulating layer covering the first upper insulating layer, the second upper insulating layer having a hydrogen diffusion coefficient smaller than a hydrogen diffusion coefficient of the first upper insulating layer.
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Nagata Hitoshi
Nakagawa Naoki
Sakamoto Takao
Booth Richard A.
Mitsubishi Electric Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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