Semiconductor device and method of manufacturing thereof

Details Semiconductor device and method of manufacturing thereof Semiconductor device and method of manufacturing thereof

2005-04-21

2009-11-24

Coleman, W. David (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S270000, C257SE21384

Reexamination Certificate

active

07622768

ABSTRACT:
On the surface of a silicon nitride film, there is formed a thermal oxide film, over which a CVD oxide film is then formed to provide a silicon oxide film of two-layered structure films. Moreover, the total thickness of the two-layered structure films is set to a value from 5 nm to 30 nm. Thus, the silicon oxide film is made into the two-layered structure films of the thermal oxide film and the CVD oxide film to thereby achieve the thickness of the silicon oxide film. As a result, it is possible to prevent a Vth from being lowered by a charge trap phenomenon and to prevent the Vth from fluctuating due to the enlargement of the bird's beak length by the silicon oxide film.

REFERENCES:
patent: 4855804 (1989-08-01), Bergami et al.
patent: 5189501 (1993-02-01), Kawamura et al.
patent: 5321289 (1994-06-01), Baba et al.
patent: 6255176 (2001-07-01), Kim et al.
patent: 6469345 (2002-10-01), Aoki et al.
patent: 6717231 (2004-04-01), Kim et al.
patent: 6897520 (2005-05-01), Vora
patent: 2002/0024092 (2002-02-01), Palm et al.
patent: 2002/0121661 (2002-09-01), Nakamura
patent: 2002/0167046 (2002-11-01), Aoki et al.
patent: 2004/0097036 (2004-05-01), Hsiao et al.
patent: A-2000-196074 (2000-07-01), None
patent: A-2003-224274 (2003-08-01), None

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