Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-04-25

2009-11-17

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21680, C438S258000

Reexamination Certificate

active

07619278

ABSTRACT:
A semiconductor-memory device that reduces leak off due to miniaturization of memory cells, and comprises as a single unit cell: a substrate1having a trench section1a; a selector gate3that is located via an insulating film2on the substrate adjacent to the trench section1a; a first well1bthat is formed on the surface of the substrate1below the selector gate3; a floating gate6that is located via an insulating film8aon the surface of the bottom section and sidewall section of the trench section1a; a second well1cthat is formed on the surface of the bottom section of the trench section1abelow the floating gate6; a first diffusion area7athat is formed on the surface of the bottom section of the trench section1a; and a control gate11located via an insulating film8on top of the floating gate6; and where the area near the sidewall surface and bottom surface of the trench section1aforms a channel in the selector gate3; and the impurity density of the first well1bis not more than the impurity density of the second well1c.

REFERENCES:
patent: 5386132 (1995-01-01), Wong
patent: 3249811 (2001-11-01), None

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